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    DSAZIHA100083674.pdf

    • Cree
    • PRELIMINARY CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50
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    DSAZIHA100083674.pdf preview Download Datasheet

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