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DSAIH000181163.pdf
Manufacturer
IXYS
Partial File Text
Preliminary Technical Information Trench Gate Power MOSFET IXTF250N075T VDSS ID25 = 75 V = 130 A ⤠4.4 m ⦠RDS(on) (Electrically Isolated Back Surface) N-Channel Enhanceme
Type
Original
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