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    DSAIHSC000142910.pdf

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    • IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High Low Power Dissipation (per deck) - Active (max) - 85mA/75mA - Standby (TTL Inputs) - 1 .0
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