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DSA00153828.pdf
Manufacturer
Cree
Partial File Text
PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree's CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high effic
Type
Original
Part Details
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CGHV27
CGHV27100
cree rf
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