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Scans-00102280.pdf
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IRFD'212,213 0.45 AMPERES 200,150 VOLTS RPS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with exce
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ECAD Model
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IRFD212
IRFD213