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    DSAISS00031039.pdf

    • International Rectifier
    • IRG7PSH54K10DPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   VCES = 1200V   C IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C G C VC
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