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    DSASW00396837.pdf

    • Toshiba
    • GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm · Enhancement-mode VGE = 2.5 V (min.) (@IC = 150 A) · Peak collector curr
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    DSASW00396837.pdf preview Download Datasheet

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