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DSA0063953.pdf
Manufacturer
Toshiba
Partial File Text
GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collecto
Type
Original
ECAD Model
Part Details
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DSA0063953.pdf preview
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GT40M301
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