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    DASF0044415.pdf

    • Toshiba
    • 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance
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    DASF0044415.pdf preview Download Datasheet

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    2SJ200 2SK1529

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