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DASF0044415.pdf
Manufacturer
Toshiba
Partial File Text
2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance
Type
Original
ECAD Model
Part Details
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2SJ200
2SK1529