DSAIH000102352.pdf

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Partial File Text GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES · SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER · LOW C r s s : 0.02 pF (TYP) · HIGH GPS: 20 dB (TYP) AT 900 M Hz · LOW NF: 1.1 d B T Y P A T 900 MHz ·
Type Scan
ECAD Model
Alternative Parts
NE25139T1U71

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