DSA0076685.pdf

Manufacturer Toshiba
Partial File Text TOSHIBA TIM8596-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 33.5 dBm at 8.5 GHz to 9.6 GHz · High gain - G1dB = 7.5 dB at 8.5 GH
Type Original
ECAD Model
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