DSAZIHA100021987.pdf
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American Microsemiconductor
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ECG463 Transistors
P-Channel Enhancement MOSFET
Military/High-RelN
V(BR)DSS (V)
V(BR)GSS (V)30
I(D) Max. (A)10m
I(DM) Max. (A) Pulsed I(D)
@Temp (øC)
IDM Max (@25øC Amb)
@Pulse Width (s) (C
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Original
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