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DSA00128617.pdf
Manufacturer
Fujitsu
Partial File Text
FLC307XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 34.8dBm(Typ.) High Gain: G1dB = 9.5dB(Typ.) High PAE: add = 37%(Typ.) Proven Reliability Drain DESCRIPTION
Type
Original
ECAD Model
Part Details
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DSA00128617.pdf preview
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C-Band Power GaAs FET HEMT Chips
FLC307XP
fujitsu gaas fet