DSA2IH00206660.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Features · Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g
Datasheet Type Scan
ECAD Model

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