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    DSAIH00060788.pdf

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    • Insulated Gate Bipolar Transistors (IGBT) S series with SCSOA capability v ' ces mln V *C(25ยป A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247TM(X) TO-268(T) IS0PLUS247T *I(R)
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