DSAZIHA100056441.pdf
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American Microsemiconductor
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286-1BFY Transistors
N-Channel Depletion MOSFET
V(BR)DSS (V)30
V(BR)GSS (V)10
I(D) Max. (A)20m
I(DM) Max. (A) Pulsed I(D)
@Temp (øC)
IDM Max (@25øC Amb)
Absolute Max. Power Diss. (W)200m
Mi
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Original
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