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DSASW00396837.pdf
Manufacturer
Toshiba
Partial File Text
GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm · Enhancement-mode VGE = 2.5 V (min.) (@IC = 150 A) · Peak collector curr
Type
Original
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8G151
GT8G151