DSAZIHA100025502.pdf
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American Microsemiconductor
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DTG1110 Transistors
Ge PNP Power BJT
Military/High-RelN
V(BR)CEO (V)200º
V(BR)CBO (V)
I(C) Max. (A)15
Absolute Max. Power Diss. (W)106
Maximum Operating Temp (øC)125õ
I(CBO) Max. (A)15m÷
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Original
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