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DASF0035932.pdf
Manufacturer
Toshiba
Partial File Text
1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maxi
Type
Original
ECAD Model
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1SS395