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    DSAISS0006712.pdf

    • Central Semiconductor
    • PROCESS CPS041 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 41 x 41 MILS Die Thickness 8.7 MILS ± 0.6 MILS
    • Original
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    DSAISS0006712.pdf preview Download Datasheet

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