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Scans-00156816.pdf
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PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES ⢠400V, 10A, Rds(on)=600itiQ @ VGS=10V. ⢠Super high dense cell design for extremely low Rds(on>. ⢠High power and
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ECAD Model
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B740A
transistor c 4137
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