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DSA00364199.pdf
Manufacturer
Hitachi Semiconductor
Partial File Text
3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A (Z) 2nd. Edition Mar. 2001 Application UHF RF amplifier Features · Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz · Capable of
Type
Original
ECAD Model
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3SK296
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