DASF0038779.pdf

Manufacturer Toshiba
Partial File Text TOSHIBA S8855 MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 31.5 dBm at f = 15 GHz · High gain - G1dB = 6.5 dB at f = 15 GHz · Suitable for Ku-Band ampl
Type Original
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