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    DSA0073240.pdf

    • Samsung Electronics
    • IRLSZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capac
    • Original
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    DSA0073240.pdf preview Download Datasheet

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    IRLSZ34A

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