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    DSACRA00007860.pdf

    • Mitsubishi
    • < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifier
    • Original
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    DSACRA00007860.pdf preview Download Datasheet

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    GD-32 HEMT marking K Low Noise Gaas low noise Micro-X marking "K" MGF496 MGF4964 MGF4964B MGF4964BL Micro-X marking "K" transistor "micro-x" "marking" 3

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