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DSA0099889.pdf
Manufacturer
RF Micro Devices
Partial File Text
TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain
Datasheet Type
Original
ECAD Model
Part Details
Part pricing, stock, data attributes from Findchips.com
DSA0099889.pdf preview
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User Tagged Keywords
gsm cellular power amplifier
HBT transistor
RF2123
TA0012
trw RF POWER TRANSISTOR
trw rf transistor
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