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    DSAH00216353.pdf

    • IXYS
    • Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170 IXBT 16N170 VCES = 1700 V = 25 A IC25 VCE(sat) = 3.3 V Symbol VCES VCGR V
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