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    DSAEDA000123285.pdf

    • IXYS
    • Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE(sat) ≤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM
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    G50N60

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