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    DSASDKL10003315.pdf

    • GeneSiC Semiconductor
    • GA080TH65 Silicon Carbide Thyristor VFBM Features = 6500 V IT(AVM) Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating tempe
    • Original
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    DSASDKL10003315.pdf preview Download Datasheet

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