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    DSARS0037145.pdf

    • Toshiba
    • 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm Small package Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absol
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    DSARS0037145.pdf preview Download Datasheet

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    1SS395

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