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    Scans-0072154.pdf

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    • TOSHIBA GT60M104 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT60M1 04 HIGH POWER SWITCHING APPLICATIONS Unit in mm High Input Impedance High Speed : tf=0.4^s (Max.) Low
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    2-21F2C GT60M104 S5J12
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