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    DSA2IH00164297.pdf

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    • IRFR020/22/24/25 FEATURES · · · · · · · Lower R d s (ON) Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input cap acitance Extended safe operat
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    DSA2IH00164297.pdf preview Download Datasheet

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