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    • { SAMSUNG SEMICONDUCTOR INC 14E D | 71^143 00073^0 fl J[ 7^2.^-2./ MPSL01 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Wiltage: V«o=120V • Collector Dlcslpatlo
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    2N5401 MPSL01 MPSL51 SS8050 ss8550 SS9011 TRANSISTOR 2n5401 transistor D 667 C
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