DSAE0013591.pdf

Manufacturer Infineon Technologies
Partial File Text IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Product Summary Features V DS 6.2 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),m
Type Original
ECAD Model
Part Details Part pricing, stock, data attributes from Findchips.com

DSAE0013591.pdf preview Download Datasheet