DSA2IH00206585.pdf

Manufacturer Not Available
Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Features · Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level · High
Type Scan
ECAD Model

DSA2IH00206585.pdf preview Download Datasheet