DSAUTAZ0020734.pdf
- Fairchild Semiconductor
- FQT7N10 N-Channel MOSFET March 2013 100 V, 1.7 A, 350 m Description N-Channel QFET® MOSFET Features · 1.7 A, 100 V, RDS(on)=350 m(Max.) @VGS=10 V, ID=0.85 A · Low Gate Charge (Typ. 5.8 nC)
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