Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSAEDA000123597.pdf

    • IXYS
    • High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE(sat) ≤ 3.3V IXBX25N250 Symbol Test Conditions Maximum Ratings VCES TC = 25°
    • Original
    • Price & Stock Powered by Findchips

    DSAEDA000123597.pdf preview Download Datasheet

    Newly Added Datasheets | Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2024.

    Supplyframe Tracking Pixel