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DSASW00135408.pdf
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Partial File Text
PROCESS CP361R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 14.2 x 14.2 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.94 x 3.94
Type
Original
ECAD Model
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CEDM7001
CMNDM7001
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