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    DSAZIHA100017232.pdf

    • American Microsemiconductor
    • 2G302 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)10 V(BR)CBO (V) I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)6.0u @V
    • Original

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