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    DSASW00397071.pdf

    • Toshiba
    • 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.24V (typ.) @IF = 5mA 0.6±0
    • Original
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    DSASW00397071.pdf preview Download Datasheet

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