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Scans-00114794.pdf
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VERY LOW RON SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR CM 697 GEOMETRY 448, PG. 59 ⢠LOW RDS - 150hms MAXIMUM ⢠LOW Vp-3 Volts MAXIMUM ⢠HIGH lDSS -30 mA MI
Type
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ECAD Model
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