DSAZIHA100056509.pdf
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American Microsemiconductor
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2N3666 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)80
V(BR)CBO (V)120
I(C) Max. (A)1.0
Absolute Max. Power Diss. (W)5.0
Maximum Operating Temp (øC)175þ
I(CBO) Max. (A)50nÃ
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Original
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