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    DSA00269207.pdf

    • Central Semiconductor
    • PROCESS CP230 Power Transistors NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad
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    DSA00269207.pdf preview Download Datasheet

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    "Darlington Transistor" CJD122 CP230 CZT122 darlington transistor power
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