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DSA00471228.pdf
Manufacturer
Toshiba
Partial File Text
GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collecto
Type
Original
ECAD Model
Part Details
Part pricing, stock, data attributes from Findchips.com
DSA00471228.pdf preview
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GT60M303
GT60M303 circuit
toshiba code igbt
TOSHIBA IGBT
TOSHIBA IGBT GT60M303
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