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DSA00389621.pdf
Manufacturer
Toshiba
Partial File Text
MICROWAVE POWER GaAs FET TIM4450-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.
Datasheet Type
Original
ECAD Model
Part Details
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TIM4450-35SL
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