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    • Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400,500 VOLTS EQUIV. RDS(OM) = 0.12 ft This IGT" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off pow
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    IGT8D20 IGT8E20 VQE 23 E
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