DSAZIHA100017454.pdf
- American Microsemiconductor
- 2N1129 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25â V(BR)CBO (V)25 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u
- Original
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