DSA2IH00204829.pdf

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Partial File Text INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M101 Unit in mm 20.5MAX #3.3±0.2 HIGH POWER SWITCHING APPLICATIONS. . High Input Impedance . High Speed : tf=0.7ns(Max.) . Low S
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DSA2IH00204829.pdf preview Download Datasheet