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    DSA2IH00173726.pdf

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    • / = 7 SGS-THOMSON M(g[Mmi(mEMO(gS IRF620 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 110x110 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNE
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