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    DSAE00231.pdf

    • Nitronex
    • NPT35050A Datasheet Gallium Nitride 28V, 50W High Electron Mobility Transistor NPT35050A Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Si technology. FEATURES · Designed f
    • Original
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    DSAE00231.pdf preview Download Datasheet

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